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Instead of changing the light bulb, light dimmer circuits are designed in order to control the brightness of a bulb. 4.2 (a). Triac Characteristics Apparatus with Regulated Power Supplies Objective:- To study the MT Characteristics with Gate Signal in all the 4 Quadrants.Features:- Instrument comprises of Two DC Regulated Power Supplies 0-15VDC/150mA & 0-5VDC/150mA, three round meters for voltage & current measurement Triac mounted behind the panel, connections of Supplies & Triac brought out at 4mm … cathode, the curve between V and I is called the forward characteristics. IGBT Characteristics 17 5. S. No. 05-09 3 Controlled HWR and FWR using RC triggering circuit 10-14 4 UJT firing circuit for HWR and FWR circuits 15-20 5 Generation of firing signals for thyristors/ trials using digital circuits / microprocessor. Experiment -3. A small leakage current, called the forward leakage current, flows as shown by OM in the V-I characteristics of SCR in this mode.As the forward leakage current is small, SCR offers high impedance. 6.3.2 illustrates the main characteristics of the triac. The characteristics curve is shown in the below Diagram. 8-1(f). It has no cathode terminal, one of the three is gate and the others are A 1 (MT1 i.e. The Thyristor is held in the off condition -- that is, all current flow in the circuit is blocked by the Thyristor except a minute leakage current. Power Electronics. Fig. In this mode, the junction J1 and J3 are forward biased but junction J2 is reverse biased. Fig. TRIAC Characteristics Experiment Our light sources such as tube lights have their power rating. The TRIAC is a three-terminal device which can conduct in either direction. directional triode thyristor, the TRIAC, as shown in fig. The invention of the TRIAC was necessitated because of the need for controlling power fed to ac loads. Show your calculations for voltage with firing angle in reading 3 Show your calculations for voltage with firing angle in reading 7 Sketch the variation of output voltage with firing angle. UJT Triggering of SCR – HWR & FWR 33 9. 1 EXPERIMENT TITLE MODULE NO. Fig. 01-04 2 Static characteristics of MOSFET and IGBT. LAB X. I-V CHARACTERISTICS OF MOSFETs 1. Power electronic trainer 2. Important Points About The V-I Characteristics of SCR Forward Characteristics. Sketch Characteristics of TRIAC To study the V-I characteristics of TRAIC. 4 – (a) PNP Structure (b) I-V Characteristic Curve. Aim: To study the V-I characteristics of TRIAC. Triac Characteristics Apparatus with Regulated Power Supplies Objective:- To study the MT Characteristics with Gate Signal in all the 4 Quadrants.Features:- Instrument comprises of Two DC Regulated Power Supplies 0-15VDC/150mA & 0-5VDC/150mA, three round meters for voltage & current measurement Triac mounted behind the panel, connections of Supplies & Triac brought out at 4mm … The term IGBT is a semiconductor device and the acronym of the IGBT is insulated gate bipolar transistor. (LC Commutation Circuit) Oscillation Chopper Circuit 29 8. 2mm Patch cords. 1 Object Load test on DC Shunt motor. Then the Thyristor is … V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. If the supply voltage is increased from zero, a point reached (point A) when the SCR starts conducting. With switch SW1 open, no current flows into the Gate of the triac and the lamp is therefore “OFF”. Objective : To study the MT Characteristics with Gate Signal in all the 4 Quadrants. No 1. 2. 6-12(b) is the symbol for triac. UJT Triggering of SCR 23 7. We will discuss the operation of this circuit in the description of experiment circuit section. The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice-versa for the third quadrant. To study the TRIAC based AC/AC regulator or 1-Phase AC voltage controller using TRIAC Apparatus or Components: 1. This allows the component to conduct in both directions. TRIAC Characteristics 9 3. The structure of IGBT is very much similar to that of PMOSFET, except one layer known as injection layer which is p + unlike n + substrate in PMOSFET. By using this product student can understand the basic concept of DIAC, TRIAC & SCR which are the basic devices used in Power Electronics. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. To obtain V-I characteristics and to find on-state forward resistance of given SCR. Other layers are called the drift and the body region. APPARATUS REQUIRED: Trainer kit, Patch cards, Multimeters. 2. Thyristors, Static V-I Characteristics of SCR, TRIAC, GTO & IGBT, Turn-On & Turn-OFF Mechanism of SCR, Gate Turnoff Thyristor (GTO) .Power BJTs . ☞Switch on Kit observe whether meter are reading 0. iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. of SCR and Triac phase controls shows how this is possible. Note that the 2N3819 uses the pin out shown at left. The triac also … ; V GT is a range of gate voltages that will trigger conduction. VI CHARACTERISTICS OF IGBT 20 5. The 2N3819 is a more typical and ideal JFET than the 2N4392; is its transfer characteristic closer to a parabola (that is, is its transconductance closer to linear)? If high brightness is required, high watt bulb would have to play its role and vice versa. The characteristics of a TRIAC are similar to those of an SCR, both in blocking and conducting states, except for the fact that SCR conducts only in the forward direction, whereas the TRIAC conducts in both the directions. MOSFET Characteristics 15 4. RC Triggering Circuit – HWR & FWR 19 6. Fig. Experiment Steps ☞Connections are made as shown in the circuit diagram. Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. The bridge rectifier, D1 to D4, provides a pulsating dc form the 18V ac voltage. It is composed by joining p type and n type semiconductors in 5 layers as in fig. Unlike the SCR, the triac conducts in either direction when turned on. Apparatus Required: 1. Zener Use the Curve Tracer to find the transfer characteristics of a 2N3819 JFET. To determine holding, latching current and break over voltage of given SCR. TRIAC have five layer and three terminals, the name TRIAC comes from its three electrodes (terminals) shown in fig9. main terminal) and A 2 (MT2) as it conducts by terminal. The two junctions are labeled J 1 and J 2.Figure below show the structure of n-channel IGBT. Experiment no. Fig :-modes of operation of TRIAC 10.Conduct an experiment to produce variable DC o/p voltage (chopper), plot o/p voltage v/s duty cycle for Variable frequency & Fixed Frequency. The operation can be summarized as follows-First Quadrant Operation of Triac. Nvis 6530A Understanding Characteristics of DIAC, TRIAC & SCR is remarkable and frequently used laboratory equipment which is designed to explain fundamentals and working of DIAC, TRIAC & SCR. 1 Thyristors DC Characteristics PREPARED BY: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 To become familiar with the characteristics of the (SCR) silicon controlled rectifier and its operation. 1.2 To measure the gate trigger voltage and the holding current of a typical SCR by using dc measurement methods. Dual channel Oscilloscope 3. ☞Set both voltages to minimum position, and then switch on SPDT. VI CHARACTERISTICS OF MOSFET 14 4. NV6532 TRIAC Characteristic Trainer 2. The triac characteristics is similar to SCR but it is applicable to both positive and negative triac voltages. Characteristics of a Triac. Fig.2 shows the characteristics of TRIAC. DATE NAME OF THE EXPERIMENT SIGNATURE REMARKS 1 Gate Pulse Generation using R, RC and UJT 2 Characteristics of SCR 3 Characteristics of Triac 4 Characteristics of MOSFET and IGBT 5 AC to DC half controlled converter 6 AC to DC fully controlled Converter 7 Step down and step up MOSFET based choppers 8 IGBT based single phase PWM inverter Triac means the device for AC control composed of 3 electrodes. Plot the graph of VORMS v/s 〈. Power MOSFETs - Insulated Gate Bipolar Transistors (IGBTs) - Basic Structure and VI Characteristics. TRIAC is a type of Thyristors that can conduct current in both directions when the polarity activated. OBJECTIVE In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. Conduct an experiment to control the illumination of incandescent lamp using TRIAC, DIAC combination. The circuit above shows a simple DC triggered triac power switching circuit. ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. Apparatus 1. Voltage at terminal MT 2 is positive with respect to terminal MT 1 and gate voltage is also positive with respect to first terminal. THEORY: - TRIAC is one of the bidirectional devices of thyristor family. EED 306. Introduction to Triac-Its construction and Operation The triac is another three-terminal ac switch that is triggered into conduction when a low-energy signal is applied to its gate terminal. SCR Characteristics 3 2. The circuit symbol and schematic construction of one such device are shown in fig.1. Experiment 4 : TRIAC Characteristic Theory. 2. ☞Increase VAK voltage to maximum position. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. The TRIAC is like the DIAC with a gate terminal. TRIAC. When anode is positive w.r.t. Plot the transconductance of this JFET. Protection, cooling and mounting techniques. The V-I characteristics of a TRIAC is based on the terminal MT1 as the reference point. 2. It consists of three terminals with a vast range of bipolar current carrying capacity.The designers of the IGBT think that it is a voltage controlled bipolar device with … TRIAC switch The TRIAC (Triode AC) model is designed using two anti-parallel SCR switch models as shown below. 6-12(a) and attaching 2 main electrodes and 1 gate electrode. Triac Characteristics Apparatus with Regulated Power Supplies (AE 228 ). The anode and cathode are connected to main source through the EXPERIMENT-1(a) V-I CHARACTERISTICS OF SCR AIM: 1. ... VI CHARACTERISTICS OF TRIAC 8 3. Experiment 5 Registration No. This injection layer is the key to the superior characteristics of IGBT. Static, dynamic and thermal characteristics. Features :Instrument comprises of two DC Regulated Power Supplies 0-30VDC/150mA & 0-5 VDC/150mA, three round meters for voltage & current measurement, Triac mounted behind the panel, connections of Supplies & Triac brought out at 4mm … Experiment No Page. In fig.1, OABC is the forward characteristics of SCR at I G =0. Let us consider PNP structure where terminals MT1 and MT2 are connected to P1 and P2 outer layers respectively and are separated by N layer. 8-3 shows the UJT-SCR phase control circuit used in this experiment. An elementary circuit diagram for obtaining static V-I characteristics of a thyristor is shown in Fig. Two AVO meter 4. Experiment: 3 Study of TRIAC Characteristics Objective: 1. Output Power Characteristics Phase control is the most common form of Thyristor power control. Before switch on the power, get circuit connection approval from the staff in charge.DOING EXPERIMENT: Start the experiment in the presence of an instructor / staff in-charge and do the same by proper procedure. Experiment No: 2 Experiment Name: Study of V- I Characteristics of TRIAC. To control the brightness of a typical SCR by using DC measurement methods provides a pulsating DC form 18V... 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